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Data Sheet No. PD60163-T IR2109(4) (S) HALF-BRIDGE DRIVER Features * Floating channel designed for bootstrap operation * * * * * * * * * * Product Summary VOFFSET IO+/VOUT ton/off (typ.) Dead Time 600V max. 120 mA / 250 mA 10 - 20V 750 & 200 ns 540 ns Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V Undervoltage lockout for both channels 3.3V, 5V and 15V input logic compatible Cross-conduction prevention logic Matched propagation delay for both channels High side output in phase with IN input Logic and power ground +/- 5V offset. Internal 540ns dead-time, and programmable up to 5us with one external RDT resistor (IR21094) Lower di/dt gate driver for better noise immunity Shut down input turns off both channels. (programmable up to 5uS for IR21094) Packages 14 Lead SOIC Description The IR2109(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and 8 Lead SOIC low side referenced output channels. Proprietary HVIC 14 Lead PDIP and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, 8 Lead PDIP down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts. Typical Connection up to 600V VCC VCC IN SD VB HO VS LO TO LOAD IN SD COM up to 600V IR21094 IR2109 HO V CC IN SD V CC IN SD DT V SS RDT V SS COM LO VB VS TO LOAD (Refer to Lead Assignments for correct configuration). This/These diagram(s) show electrical connections only. Please refer to our Application Notes and DesignTips for proper circuit board layout. www.irf.com 1 IR2109(4) (S) Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Symbol VB VS VHO VCC VLO DT VIN VSS dVS/dt PD Definition High side floating absolute voltage High side floating supply offset voltage High side floating output voltage Low side and logic fixed supply voltage Low side output voltage Programmable dead-time pin voltage (IR21094 only) Logic input voltage (IN & SD) Logic ground (IR21094/IR21894 only) Allowable offset supply voltage transient Package power dissipation @ T A +25C (8 Lead PDIP) (8 Lead SOIC) (14 lead PDIP) (14 lead SOIC) Min. -0.3 VB - 25 VS - 0.3 -0.3 -0.3 VSS - 0.3 VSS - 0.3 VCC - 25 -- -- -- -- -- -- -- -- -- -- -50 -- Max. 625 VB + 0.3 VB + 0.3 25 VCC + 0.3 VCC + 0.3 VCC + 0.3 VCC + 0.3 50 1.0 0.625 1.6 1.0 125 200 75 120 150 150 300 Units V V/ns W RthJA Thermal resistance, junction to ambient (8 Lead PDIP) (8 Lead SOIC) (14 lead PDIP) (14 lead SOIC) C/W TJ TS TL Junction temperature Storage temperature Lead temperature (soldering, 10 seconds) C 2 www.irf.com IR2109(4) (S) Recommended Operating Conditions The input/output logic timing diagram is shown in figure 1. For proper operation the device should be used within the recommended conditions. The VS and VSS offset rating are tested with all supplies biased at 15V differential. Symbol VB VS VHO VCC VLO VIN DT VSS TA Definition High side floating supply absolute voltage High side floating supply offset voltage High side floating output voltage Low side and logic fixed supply voltage Low side output voltage Logic input voltage (IN & SD) Programmable dead-time pin voltage (IR21094 only) Logic ground (IR21094 only) Ambient temperature Min. VS + 10 Note 1 VS 10 0 VSS VSS -5 -40 Max. VS + 20 600 VB 20 VCC VCC VCC 5 125 Units V C Note 1: Logic operational for VS of -5 to +600V. Logic state held for VS of -5V to -VBS. (Please refer to the Design Tip DT97-3 for more details). Dynamic Electrical Characteristics VBIAS (VCC, VBS) = 15V, VSS = COM, CL = 1000 pF, TA = 25C, DT = VSS unless otherwise specified. Symbol ton toff tsd MT tr tf DT MDT Definition Turn-on propagation delay Turn-off propagation delay Shut-down propagation delay Delay matching, HS & LS turn-on/off Turn-on rise time Turn-off fall time Deadtime: LO turn-off to HO turn-on(DTLO-HO) & HO turn-off to LO turn-on (DTHO-LO) Deadtime matching = DTLO - HO - DTHO-LO Min. -- -- -- -- -- -- 400 4 -- -- Typ. 750 200 200 0 150 50 540 5 0 0 Max. Units Test Conditions 950 280 280 70 220 80 680 6 60 600 usec nsec nsec VS = 0V VS = 0V RDT= 0 RDT = 200k (IR21094) RDT=0 RDT = 200k (IR21094) VS = 0V VS = 0V or 600V www.irf.com 3 IR2109(4) (S) Static Electrical Characteristics VBIAS (VCC , V BS) = 15V, V SS = COM, DT= VSS and TA = 25C unless otherwise specified. The VIL, VIH and IIN parameters are referenced to VSS /COM and are applicable to the respective input leads: IN and SD. The VO, IO and Ron parameters are referenced to COM and are applicable to the respective output leads: HO and LO. Symbol VIH VIL VSD,TH+ VSD,THVOH VOL ILK IQBS IQCC IIN+ IINVCCUV+ VBSUV+ VCCUVVBSUVVCCUVH VBSUVH IO+ IO- Definition Logic "1" input voltage for HO & logic "0" for LO Logic "0" input voltage for HO & logic "1" for LO SD input positive going threshold SD input negative going threshold High level output voltage, VBIAS - VO Low level output voltage, VO Offset supply leakage current Quiescent VBS supply current Quiescent VCC supply current Logic "1" input bias current Logic "0" input bias current VCC and VBS supply undervoltage positive going threshold VCC and VBS supply undervoltage negative going threshold Hysteresis Output high short circuit pulsed vurrent Output low short circuit pulsed current Min. Typ. Max. Units Test Conditions 2.9 -- 2.9 -- -- -- -- 20 0.4 -- -- 8.0 7.4 0.3 120 250 -- -- -- -- 0.8 0.3 -- 75 1.0 5 -- 8.9 8.2 0.7 200 350 -- 0.8 -- 0.8 1.4 0.6 50 130 1.6 20 2 9.8 9.0 V -- -- -- mA VO = 0V, PW 10 s VO = 15V,PW 10 s A A mA V VCC = 10V to 20V VCC = 10V to 20V VCC = 10V to 20V VCC = 10V to 20V IO = 20 mA IO = 20 mA VB = VS = 600V VIN = 0V or 5V VIN = 0V or 5V RDT = 0 IN = 5V, SD = 0V IN = 0V, SD = 5V 4 www.irf.com IR2109(4) (S) Functional Block Diagrams VB IR2109 IN VSS/COM LEVEL SHIFT HV LEVEL SHIFTER PULSE GENERATOR UV DETECT R PULSE FILTER R S Q HO VS DEADTIME UV DETECT VCC +5V LO SD VSS/COM LEVEL SHIFT DELAY COM VB IR21094 IN VSS/COM LEVEL SHIFT HV LEVEL SHIFTER PULSE GENERATOR PULSE FILTER UV DETECT R R S Q HO VS DT +5V DEADTIME UV DETECT VCC LO SD VSS/COM LEVEL SHIFT DELAY COM VSS www.irf.com 5 IR2109(4) (S) Lead Definitions Symbol Description IN SD DT VSS VB HO VS VCC LO COM Logic input for high and low side gate driver outputs (HO and LO), in phase with HO (referenced to COM for IR2109 and VSS for IR21094) Logic input for shutdown (referenced to COM for IR2109 and VSS for IR21094) Programmable dead-time lead, referenced to VSS. (IR21094 only) Logic Ground (21094 only) High side floating supply High side gate drive output High side floating supply return Low side and logic fixed supply Low side gate drive output Low side return Lead Assignments 1 2 3 4 VCC IN SD COM VB HO VS LO 8 7 6 5 1 2 3 4 VCC IN SD COM VB HO VS LO 8 7 6 5 8 Lead PDIP 8 Lead SOIC IR2109 IR2109S 1 2 3 4 5 6 7 VCC IN SD DT VSS COM LO VB HO VS 14 13 12 11 10 9 8 1 2 3 4 5 6 7 VCC IN SD DT VSS COM LO VB HO VS 14 13 12 11 10 9 8 14 Lead PDIP 14 Lead SOIC IR21094 6 IR21094S www.irf.com IR2109(4) (S) IN IN(LO) 50% 50% SD IN(HO) ton tr 90% toff 90% tf HO LO LO HO Figure 1. Input/Output Timing Diagram 10% 10% Figure 2. Switching Time Waveform Definitions SD 50% IN 50% 50% tsd 90% HO LO 90% HO LO DT LO-HO 10% DTHO-LO 90% Figure 3. Shutdown Waveform Definitions 10% MDT= DTLO-HO - DTHO-LO IN (LO) 50% 50% Figure 4. Deadtime Waveform Definitions IN (HO) LO HO 10% MT 90% MT LO HO Figure 5. Delay Matching Waveform Definitions www.irf.com 7 IR2109(4) (S) 1300 1300 Turn-on Propagation Delay (ns) Turn-on Propagation Delay (ns) 1100 1100 M ax. 900 M ax 900 Typ. 700 Typ. 700 500 50 500 25 0 25 50 75 100 125 10 12 14 16 18 20 Temperature ( oC) V BIAS Supply Voltage (V) Figure 6B. Turn-on Propagation Delay vs. Supply Voltage Figure 6A. Turn-on Propagation Delay vs. Temperature 500 500 Turn-off Propagation Delay (ns) Turn-off Propagation Delay (ns) 400 400 M ax. 300 Typ. 200 300 M ax. 200 Typ. 100 100 0 50 25 0 25 50 o 0 75 100 125 10 12 14 16 18 20 Temperature ( C) Figure 7A. Turn-off Propagation Delay vs. Temperature V BIAS Supply Voltage (V) Figure 7B. Turn-off Propagation Delay vs. Supply Voltage 8 www.irf.com IR2109(4) (S) 500 500 SD Propagation Delay (ns) 400 SD Propagation Delay (ns) 400 M ax. 300 Typ. 200 300 M ax. 200 Typ. 100 100 0 50 25 0 25 50 75 100 125 0 10 12 14 16 18 20 Temperature (oC) Figure 8A. SD Propagation Delay vs. Temperature V BIAS Supply Voltage (V) Figure 8B. SD Propagation Delay vs. Supply Voltage 500 500 Turn-on Rise Time (ns) Turn-on Rise Time (ns) 400 400 300 300 M ax. Typ. 200 200 M ax. Typ. 100 100 0 50 25 0 25 50 75 100 125 0 10 12 14 16 18 20 Temperature (oC) Figure 9A. Turn-on Rise Time vs. Temperature V BIAS Supply Voltage (V) Figure 9B. Turn-on Rise Time vs. Supply Voltage www.irf.com 9 IR2109(4) (S) 200 200 Turn-off Fall Time (ns) Turn-off Fall Time (ns) 150 150 100 M ax. 50 Typ. 0 50 25 0 25 50 75 100 125 100 M ax. Typ. 50 0 10 12 14 16 18 20 Temperature ( oC) Figure 10A. Turn-off Fall Time vs. Temperature V BIAS Supply Voltage (V) Figure 10B. Turn-off Fall Time vs. Supply Voltage 1000 1000 800 M ax. 600 Typ. Mi n. 800 Deadtime (ns) Deadtime (ns) M ax. 600 Typ. Mi n. 400 400 200 50 25 0 25 50 75 100 125 200 10 12 14 16 18 20 Temperature ( oC) V BIAS Supply Voltage (V) Figure 11B. Deadtime vs. Supply Voltage Figure 11A. Deadtime vs. Temperature 10 www.irf.com IR2109(4) (S) 7 5 Logic "1" Input Voltage (V) 6 M ax. 5 4 M ax. 3 Deadtime ( s) Typ. 4 3 2 1 0 0 50 100 150 200 Mi n. 2 1 0 50 25 0 25 50 o 75 100 125 RDT (K) Figure 11C. Deadtime vs. RDT (IR21094 only) Temperature ( C) Figure 12A. Logic "1" Input Voltage vs. Temperature 5 5 Logic "0" Input Voltage (V) Logic "1" Input Voltage (V) 4 M ax. 3 4 3 2 2 1 1 Mi n. 0 10 12 14 16 18 20 0 50 25 0 25 50 o 75 100 125 V CC Supply Voltage (V) Figure 12B. Logic "1" Input Voltage vs. Supply Voltage Temperature ( C) Figure 13A. Logic "0" Input Voltage vs. Temperature www.irf.com 11 IR2109(4) (S) 5 5 4 SD Positive Going Threshold (V) Logic "0" Input Voltage (V) 4 3 3 M ax. 2 2 1 Mi n. 1 0 10 12 14 16 18 20 0 50 25 0 25 50 o 75 100 125 V CC Supply Voltage (V) Figure 13B. Logic "0" Input Current vs. Supply Voltage Temperature ( C) Figure 14A. SD Positive Going Threshold vs. Temperature 5 5 SD Negative Going Threshold (V) SD Positive Going Threshold (V) 4 4 3 M ax. 3 2 2 1 1 Mi n. 0 10 12 14 16 18 20 0 -50 -25 0 25 50 75 100 125 V CC Supply Voltage (V) Figure 14B. SD Positive Going Threshold vs. Supply Voltage Temperature (oC) Figure 15A. SD Negative Going Threshold vs. Temperature 12 www.irf.com IR2109(4) (S) 5 4 SD Negative Going Threshold (V) 4 High Level Output Voltage (V) 12 14 16 18 20 3 3 2 2 M ax. 1 Typ. 1 Mi n. 0 10 0 50 25 0 25 50 o 75 100 125 V CC Supply Voltage (V) Figure 15B. SD Negative Going Threshold vs. Supply Voltage Temperature ( C) Figure 16A. High Level Output Voltage vs. Temperature 4 1. 5 High Level Output Voltage (V) Low Level Output Voltage (V) 1. 2 3 0. 9 2 M ax. 0. 6 M ax. 0. 3 Typ. 0 Typ. 1 0 10 12 14 16 18 20 -50 -25 0 25 50 75 100 125 V BIAS Supply Voltage (V) Figure 16B. High Level Output Voltage vs. Supply Voltage Temperature (oC) Figure 17A. Low Level Output Voltage vs. Temperature www.irf.com 13 IR2109(4) (S) Offset Supply Leakage Current ( A) 1. 5 500 Low Level Output Voltage (V) 1. 2 400 0. 9 M ax. 0. 6 Typ. 0. 3 300 200 100 M ax. 0 50 25 0 25 50 o 0 10 12 14 16 18 20 75 100 125 V BIAS Supply Voltage (V) Figure 17B. Low Level Output Voltage vs. Supply Voltage Temperature ( C) Figure 18A. Offset Supply Leakage Current vs. Temperature O ffs e t S u p p l L e a ka g e C u rre n t ( y A) 500 400 400 S u p p l C u rre n t ( A ) y 300 300 200 200 M ax. 100 Typ. Mi n. M ax. V 0 50 100 0 0 100 200 300 400 500 600 BS 25 0 25 50 75 100 125 V B B o o s t V o l g e (V ) ta T e m p e ra tu re (oC ) igure 18B. Offset Supply Leakage Current vs. Boost Voltage Figure 19A. VBS Supply Current vs. Temperature 14 www.irf.com IR2109(4) (S) 400 3. 0 V BS S u p pl C u rre nt ( A ) y 300 V c c S u p pl C urre nt (m A ) y 2. 5 2. 0 M ax. 1. 5 Typ. 1. 0 Mi n. 0. 5 200 M ax. Typ. Mi n. 0 10 12 14 16 18 20 100 0. 0 50 25 0 25 50 75 100 125 V BS S up p l V o l ge (V ) y ta Figure 19B. VBS Supply Current vs. Supply Voltage T em p e ra tu re (oC ) Figure 20A. VCC Supply Current vs. Temperature 3. 0 60 Logic "1" Input Current ( A) V CC Supply Current (mA) 2. 5 50 2. 0 40 1. 5 M ax. 1. 0 Typ. 0. 5 Mi n. 0. 0 10 12 14 16 18 20 30 20 M ax. Typ. 0 50 10 25 0 25 50 75 100 125 V CC Supply Voltage (V) Temperature (oC) i Figure 20B. VCC Supply Current vs. VCC Supply Voltage 21 i 1 C Figure 21A. Logic "1" Input Current vs. Temperature www.irf.com 15 IR2109(4) (S) 60 5 Logic "1" Input Current ( A) 50 Logic "0" Input Current ( A) 12 14 16 18 20 4 40 3 M ax. 2 30 M ax. 20 10 Typ. 0 10 1 0 -50 -25 0 25 50 o 75 100 125 V CC Supply Voltage (V) Figure 21B. Logic "1" Input Current vs. Supply Voltage Temperature ( C) Figure 22A. Logic "0" Input Current vs. Temperature 5 12 V CC UVLO Threshold (+) (V) Logic "0" Input Current ( A) 4 11 3 M ax. 2 10 M ax. 9 Typ. Mi n. 8 1 0 10 12 14 16 18 20 7 50 25 0 25 50 o 75 100 125 V CC Supply Voltage (V) Figure 22B. Logic "0" Input Currentt vs. Supply Voltage Temperature ( C) Figure 23. VCC Undervoltage Threshold (+) vs. Temperature 16 www.irf.com IR2109(4) (S) 11 12 V CC UVLO Threshold (-) (V) V BS UVLO Threshold (+) (V) 0 25 50 75 100 125 10 M ax. 9 Typ. 8 Mi n. 7 11 10 M ax. Typ. 9 Mi n. 8 6 50 25 7 50 25 0 25 50 o 75 100 125 Temperature ( oC) Figure 24. VCC Undervoltage Threshold (-) vs. Temperature Temperature ( C) Figure 25. VBS Undervoltage Threshold (+) vs. Temperature 11 500 V BS UVLO Threshold (-) (V) Output Source Current ( A) 10 400 M ax. 9 Typ. 8 Mi n. 7 300 Typ. 200 Mi n. 100 6 50 25 0 25 50 o 0 75 100 125 50 25 0 25 50 o 75 100 125 Temperature ( C) Figure 26. VBS Undervoltage Threshold (-) vs. Temperature Temperature ( C) Figure 27A. Output Source Current vs. Temperature www.irf.com 17 IR2109(4) (S) 500 600 Output Source Current ( A) 400 Output Sink Current ( A) 500 Typ. 400 Mi n. 300 300 200 Typ. 100 Mi n. 0 10 12 14 16 18 20 200 100 0 50 25 0 25 50 o 75 100 125 V BIAS Supply Voltage (V) Temperature ( C) Figure 27B. Output Source Current vs. Supply Voltage Figure 28A. Output Sink Current vs. Temperature 600 0 Output Sink Current ( A) 500 V S Offset Supply Voltage (V) 2 Typ. 4 400 300 Typ. 200 Mi n. 100 6 8 0 10 12 14 16 18 20 10 10 12 14 16 18 20 V BIAS Supply Voltage (V) V BS Flouting Supply Voltage (V) Figure 28B. Output Sink Currentt vs. Supply Voltage Figure 29. Maximum VS Negative Offset vs. Supply Voltage 18 www.irf.com IR2109(4) (S) 140 120 100 80 60 40 20 1 10 100 1000 Frequency (KHz) Figure 30. IR2109 vs Frequency (IRFBC20) Rgate = 33, VCC = 15V 140V 70V 0V 140 120 Temperature (oC) 100 140V Temprature (oC) 80 70V 60 40 20 1 10 100 0V 1000 Frequency (KHz) Figure 31. IR2109 vs Frequency (IRFBC30) Rgate = 22, VCC = 15V 140 120 Temperature (oC) 100 140V 140 120 Temperature (oC) 100 80 60 40 20 1 10 100 1000 1 10 100 140V 70V 0V 80 60 40 20 Frequency (KHz) 70V 0V 1000 Frequency (KHz) Figure 32. IR2109 vs Frequency (IRFBC40) Rgate = 15, VCC = 15V Figure 33. IR2109 vs Frequency (IRFPE50) Rgate = 10, VCC = 15V www.irf.com 19 IR2109(4) (S) 140 120 Temperature (oC) o Temperature ( C) 140 120 100 80 140V 100 80 60 40 0V 140V 70V 60 70V 40 20 1 10 100 1000 1 10 100 0V 20 Frequency (KHz) Figure 34. IR21094 vs. Frequency (IRFBC20), Rgate=33 , V CC=15V 1000 Frequency (KHz) Figure 35. IR21094 vs. Frequency (IRFBC30), Rgate=22 , V CC=15V 140 120 Temperature (oC) 100 140V 140 120 Temperature (o C) 100 80 60 40 20 140V 70V 0V 80 60 40 20 1 10 100 70V 0V 1000 1 10 100 1000 Frequency (KHz) Figure 36. IR21094 vs. Frequency (IRFBC40), Rgate=15 , V CC=15V Frequency (KHz) Figure 37. IR21094 vs. Frequency (IRFPE50), Rgate=10 , V CC=15V 20 www.irf.com IR2109(4) (S) 140 120 Temperature (oC) Temperature (oC) 140 120 140V 100 80 60 40 20 1 10 100 1000 Frequency (KHz) Figure 38. IR2109S vs. Frequency (IRFBC20), Rgate=33 , V CC=15V 140V 70V 0V 100 80 60 40 20 1 10 100 70V 0V 1000 Frequency (KHz) Figure 39. IR2109S vs. Frequency (IRFBC30), Rgate=22 , V CC=15V 140 120 Temperature (o C) 140V 70V 140 120 Tempreture (oC) 140V 70V 0V 0V 100 80 60 40 20 1 10 100 1000 Frequency (KHz) 100 80 60 40 20 1 10 100 1000 Frequency (KHz) Figure 40. IR2109S vs. Frequency (IRFBC40), Rgate=15 , V CC=15V Figure 41. IR2109S vs. Frequency (IRFPE50), Rgate=10 , V CC=15V www.irf.com 21 IR2109(4) (S) 140 120 Temperature (oC) Temperature (oC) 100 80 60 40 20 1 10 100 1000 Frequency (KHz) Figure 42. IR21094S vs. Frequency (IRFBC20), Rgate=33 , V CC=15V 140V 70V 0V 140 120 100 80 60 0V 140V 70V 40 20 1 10 100 1000 Frequency (KHz) Figure 43. IR21094S vs. Frequency (IRFBC30), Rgate=22 , V CC=15V 140 Temperature (oC) Temperature (oC) 120 100 80 60 40 20 1 10 100 1000 Frequency (KHz) Figure 44. IR21094S vs. Frequency (IRFBC40), Rgate=15 , V CC=15V 140V 70V 0V 140 120 100 80 60 40 20 1 10 100 140V 70V 0V 1000 Frequency (KHz) Figure 45. IR21094S vs. Frequency (IRFPE50), Rgate=10 , V CC=15V 22 www.irf.com IR2109(4) (S) Case Outlines 8 Lead PDIP 01-6014 01-3003 01 (MS-001AB) D A 5 B FOOTPRINT 8X 0.72 [.028] DIM A b c D INCHES MIN .0532 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MILLIMETERS MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00 A1 .0040 6 E 8 7 6 5 H 0.25 [.010] A E 6.46 [.255] 1 2 3 4 e e1 H K L 8X 1.78 [.070] .050 BASIC .025 BASIC .2284 .0099 .016 0 .2440 .0196 .050 8 1.27 BASIC 0.635 BASIC 5.80 0.25 0.40 0 6.20 0.50 1.27 8 6X e e1 3X 1.27 [.050] y A C 0.10 [.004] y K x 45 8X b 0.25 [.010] NOTES: A1 CAB 8X L 7 8X c 1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 2. CONTROLLING DIMENSION: MILLIMETER 3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INC HES]. 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006]. 6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010]. 7 DIMENSION IS THE LENG TH OF LEAD FOR SOLDERING TO A SUBSTRATE. 8 Lead SOIC www.irf.com 01-6027 01-0021 11 (MS-012AA) 23 IR2109(4) (S) 14 Lead PDIP 01-6010 01-3002 03 (MS-001AC) 14 Lead SOIC (narrow body) 01-6019 01-3063 00 (MS-012AB) Data and specifications subject to change without notice. 7/11/2003 24 www.irf.com |
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